Whether it plays an important role in the growth of KISH graphite or the growth of KISH graphite according to layer -like crystal, oxygen is an important role. Practice has proved that when the co -crystal iron fluid is exposed to the air, the KISH graphite is easy to form; turning the iron solution and the update surface can exacerbate the precipitation of KISH graphite. The action of oxygen is to form SiO2 as the base of KISH graphite nucleus. The temperature of the iron liquid temperature at below 1400 ° C is severe than high temperature because of SiO2, which is unstable above 1400 ° C. The precision phenomenon of KISH graphite cannot be seen in the low Si or Si iron liquid, which shows that the existence of SIO2 has an impact on the formation of KISH graphite that cannot be ignored.

The cooling speed is the basic process conditions formed by the formation of KISH graphite when the existence of oxygen (such as hydrogen protection). KISH graphite can only be formed at a lower cooling speed (less than 1800 ° C/h). High cooling speed, KISH graphite is suppressed, due to the rapid cooling caused by fast cooling, the crystal growth defect increases, which exacerbates the tendency of graphite branches to make the flat growth turn to volume growth. However, the cooling speed should not be too low. If the cooling speed is reduced to less than 500 ° C/h, the surface of the fuse will be formed with large graphite single crystals. The crystals will be larger, thicker, and dense than KISH graphite.