High pure graphite generally refers to graphite with carbon content of more than 99.99%. It can be divided into three types: coarse particle structure, fine particles structure, and ultra -fine particle structure in the tissue structure. In the furnace. The basic materials of the integrated circuit are mainly silicon single -crystal chips. The current growth process of silicon single crystal mainly adopts a direct pull (CZ) method. Other methods include the magnetic field direct pull method (MCZ), the area (FZ) method, and the double -yarm pull crystal method Law, the global electronic industry uses straight single -crystal silicon to account for 80% of the total amount of single crystal silicon. The graphite in the direct pull single crystal silicon furnace is consumables. Heating system. In 2005, China needed a straight silicon single -crystal furnace to use about 800 t.

Another important purpose of high pure graphite is processed into various types, which are used to produce precious metals, rare metals or high -purity metals, and non -metal materials. Graphite electrode is also a high -purity graphite, which can be used for spectral chemical analysis of all elements except carbon. Spectral analysis is formed with graphite electrodes. The content of the impurities of the finished product should not be greater than 6*10 to prepare standard samples in the spectral analysis and use chemical methods to capture impurities with a spectrum pure charcoal or spectrum pure graphite powder. It is 6 *10; in terms of certain uses, the carbon content is needed to reach 99.9995%, and the total gray content is less than 5 *10. The molding method of high pure graphite has three types: squeezing molding, molding molding, and static pressure molding. Table 9 is an example of the physical and chemical performance indicators of high -pure graphite products produced in China.