Time:2023.02.11Browse:1
The load migration rate of graphene at room temperature is about 15000cm2/(v · s). This value exceeds 10 times the silicon material. More than twice. Under certain conditions such as low temperature, the load migration rate of graphene can even be as high as 250000cm2/(v · s). Unlike many materials, the electronic migration rate of graphene is less affected by temperature changes. At any temperature between 50 and 500K, the electronic migration rate of a single layer of graphene is about 15000cm2/(v · s).
In addition, the semi -integer quantity Hall effect of the electronic carrier and the cave carrier in the graphene can be observed by changing the chemical potential through the influence of the electric field, and scientists have observed the quantum Hall effect of graphene under room temperature conditions. Essence [9] The carrier in the graphene follows a special quantum tunnel effect, which will not produce back scattering when encountering impurities. reason. Neither electron and photons in graphene have no static quality, and their speed is a constant that has nothing to do with kinetic energy.